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Patent 7,935,954 Artificial band gap Abstract A method is disclosed for the induction of a suitable band gap and electron emissive properties into a substance, in which the substrate is provided with a surface structure corresponding to the interference of electron waves. Lithographic or similar techniques are used, either directly onto a metal mounted on the substrate, or onto a mold which then is used to impress the metal. In a preferred embodiment, a trench or series of nano-sized trenches are formed in the metal. Patent 7,928,630 Monolithic thermionic converter Abstract A thermionic converter is disclosed comprising a single or multiple hot (emitter) and cold (collector) electrodes mounted side-by-side on a single substrate and a static electrostatic field for guiding electron from the emitter to the collector. The thermal path between emitter and collector electrodes is interrupted by cuts or trenches, and electrical connections to the electrodes are routed over a meander-like, high thermal resistance pathway cut into the substrate to further reduce thermal loss. In one embodiment, there is an Avto metal surface texture of nanoscale indents on one or more of the electrodes to lower a work function. A method for fabricating the monolithic thermionic converter is further disclosed. Patent 7,893,422 Transistor on the basis of new quantum interference effect Abstract A quantum interference transistor comprising a thin metal film having a protrusion and a thin insulating layer between the metal film and protrusion. A potential barrier is formed in the region beneath the protrusion as a result of quantum interference caused by the geometry of the film and protrusion. A voltage applied between the electrically isolated protrusion ("island") and the thin film leads to a change in the electron wave function of the island which in turn leads to a change in the Fermi level of the metal film in the entire region beneath the protrusion. Consequently, a potential barrier may or may not exist depending on the applied voltage, thus providing the present invention with the transistor-like property of switching between open and closed states. Patent 7,651,875 Catalysts Abstract Nanostructured surface materials having patterned indents are disclosed and there use for catalytic, therapeutic, herbicidal, pesticidal, antiviral, antibacterial and antifungal applications is disclosed. Patent 7,589,348 Thermal tunneling gap diode with integrated spacers and vacuum seal Abstract A thermionic or thermotunneling gap diode device consisting of two silicon electrodes maintained at a desired distance from one another by means of spacers. These spacers are formed by oxidizing one electrode, protecting certain oxidized areas and removing the remainder of the oxidized layer. The protected oxidized areas remain as spacers. These spacers have the effect of maintaining the electrodes at a desired distance without the need for active elements, thus greatly reducing costs. Patent 7,566,897 Quantum interference device Abstract A quantum interference transistor comprising an source region for emitting electron waves into a vacuum, a drain region for collecting the electron waves, a repeating nanostructure in a region between the source and drain regions for introducing a constant phase shift between a plurality of electron waves, and a gate for controlling the phase shift introduced by the nanostructure; wherein the repeating nanostructure is characterized by having sharply defined geometric patterns or indents of a dimension that creates de Broglie wave interference. Patent 7,351,996 Method for increasing efficiency of thermotunnel devices Abstract The present invention comprises a tunneling device in which the collector electrode is modified so that tunneling of higher energy electrons from the emitter electrode to the collector electrode is enhanced. In one embodiment, the collector electrode is contacted with an insulator layer, preferably aluminum or silicon nitride, disposed between the collector and emitter electrodes. The present invention additionally comprises a method for enhancing tunneling of higher energy electrons from an emitter electrode to a collector electrode, the method comprising the step of contacting the collector electrode with an insulator, preferably aluminum or silicon nitride, and placing the insulator between the collector electrode and the emitter electrode. Patent 7,323,709 Method for increasing efficiency of thermotunnel devices Abstract The present invention comprises a tunneling device in which the collector electrode is modified so that tunneling of higher energy electrons from the emitter electrode to the collector electrode is enhanced. In one embodiment, the collector electrode is contacted with an insulator layer, preferably aluminum oxide, disposed between the collector and emitter electrodes. The present invention additionally comprises a method for enhancing tunneling of higher energy electrons from an emitter electrode to a collector electrode, the method comprising the step of contacting the collector electrode with an insulator, preferably aluminum oxide, and placing the insulator between the collector electrode and the emitter electrode. Patent 7,220,984 Influence of surface geometry on metal properties Abstract The influence of surface geometry on metal properties is studied within the limit of the quantum theory of free electrons. It is shown that a metal surface can be modified with patterned indents to increase the Fermi energy level inside the metal, leading to decrease in electron work function. This effect would exist in any quantum system comprising fermions inside a potential energy box. Also disclosed is a method for making nanostructured surfaces having perpendicular features with sharp edges. Patent 7,169,006 Thermionic vacuum diode device with adjustable electrodes Abstract In accordance with one embodiment of the present invention, a Gap Diode is disclosed in which a tubular actuating element serves as both a housing for a pair of electrodes (92) and as a means for controlling the separation between the electrode pair. In a preferred embodiment, the tubular actuating element (90) is a quartz piezo-electric tube. In accordance with another embodiment of the present invention, a Gap Diode is disclosed which is fabricated by micromachining techniques in which the separation of the electrodes (202, 206) is controlled by piezo-electric, electrostrictive or magnetostrictive actuators. Preferred embodiments of Gap Diodes include Cool Chips, Power Chips, and photoelectric converters. Patent 7,166,786 Artificial band gap Abstract A method is disclosed for the induction of a suitable band gap and electron emissive properties into a substance, in which the substrate is provided with a surface structure corresponding to the interference of electron waves. Lithographic or similar techniques are used, either directly onto a metal mounted on the substrate, or onto a mold which then is used to impress the metal. In a preferred embodiment, a trench or series of nano-sized trenches are formed in the metal. Patent 7,074,498 Influence of surface geometry on metal properties Abstract The influence of surface geometry on metal properties is studied within the limit of the quantum theory of free electrons. It is shown that a metal surface can be modified with patterned indents to increase the Fermi energy level inside the metal, leading to decrease in electron work function. This effect would exist in any quantum system comprising fermions inside a potential energy box. Also disclosed is a method for making nanostructured surfaces having perpendicular features with sharp edges. Patent 6281514 Method for increasing of tunneling through a potential barrier Abstract A method for promoting the passage of elementary particles at or through a potential barrier comprising providing a potential barrier having a geometrical shape for causing de Broglie interference between said elementary particles is disclosed. In another embodiment, the invention provides an elementary particle-emitting surface having a series of indents. The depth of the indents is chosen so that the probability wave of the elementary particle reflected from the bottom of the indent interferes destructively with the probability wave of the elementary particle reflected from the surface. This results in the increase of tunneling through the potential barrier. When the elementary particle is an electron, then electrons tunnel through the potential barrier, thereby leading to a reduction in the effective work function of the surface. In further embodiments, the invention provides vacuum diode devices, including a vacuum diode heat pump, a thermionic converter and a photoelectric converter, in which either or both of the electrodes in these devices utilize said elementary particle-emitting surface. In yet further embodiments, the invention provides devices in which the separation of the surfaces in such devices is controlled by piezo-electric positioning elements. A further embodiment provides a method for making an elementary particle-emitting surface having a series of indents. Patent 6,680,214 Artificial band gap Abstract A method is disclosed for the induction of a suitable band gap and electron emissive properties into a substance, in which the substrate is provided with a surface structure corresponding to the interference of electron waves. Lithographic or similar techniques are used, either directly onto a metal mounted on the substrate, or onto a mold which then is used to impress the metal. In a preferred embodiment, a trench or series of nano-sized trenches are formed in the metal. Patent 6,531,703 Method for increasing emission through a potential barrier Abstract A method for promoting the passage of elementary particles at or through a potential barrier comprising providing a potential barrier having a geometrical shape for causing de Broglie interference between said elementary particles is disclosed. In another embodiment, the invention provides an elementary particle-emitting surface having a series of indents. The depth of the indents is chosen so that the probability wave of the elementary particle reflected from the bottom of the indent interferes destructively with the probability wave of the elementary particle reflected from the surface. This results in the increase of tunneling through the potential barrier. When the elementary particle is an electron, then electrons tunnel through the potential barrier, thereby leading to a reduction in the effective work function of the surface. In further embodiments the invention provides vacuum diode devices, including a vacuum diode heat pump, a thermionic converter and a photoelectric converter, in which either or both of the electrodes in these devices utilize said elementary particle-emitting surface. In yet further embodiments, the invention provides devices in which the separation of the surfaces in such devices is controlled by piezo-electric positioning elements. A further embodiment provides a method for making an elementary particle-emitting surface having a series of indents. Patent 6,495,843 Method for increasing emission through a potential barrier Abstract A method for promoting the passage of elementary particles at or through a potential barrier comprising providing a potential barrier having a geometrical shape for causing de Broglie interference between said elementary particles is disclosed. In another embodiment, the invention provides an elementary particle-emitting surface having a series of indents. The depth of the indents is chosen so that the probability wave of the elementary particle reflected from the bottom of the indent interferes destructively with the probability wave of the elementary particle reflected from the surface. This results in the increase of tunneling through the potential barrier. When the elementary particle is an electron, then electrons tunnel through the potential barrier, thereby leading to a reduction in the effective work function of the surface. In further embodiments, the invention provides vacuum diode devices, including a vacuum diode heat pump, a thermionic converter and a photoelectric converter, in which either or both of the electrodes in these devices utilize said elementary particle-emitting surface. In yet further embodiments, the invention provides devices in which the separation of the surfaces in such devices is controlled by piezo-electric positioning elements. A further embodiment provides a method for making an elementary particle-emitting surface having a series of indents. Patent 6,239,356 B1 Process for Stampable Photoelectric Generator Abstract Manufacture of a photoelectric converter by a photolithographic or stamping process prior to coating with a photoelectically emissive material is described. This gives an economic and simple means of mass-producing photoelectric converter cells, and in one aspect is analogous to that used for pressing optical discs. Patent 6,117,344 METHOD FOR MANUFACTURING LOW WORK FUNCTION SURFACES Abstract Methods for fabricating nano-structured surfaces having geometries in which the passage of elementary particles through a potential barrier is enhanced are described. The methods use combinations of electron beam lithography, lift-off, and rolling, imprinting or stamping processes. Patent 5,981,866 PROCESS FOR STAMPABLE PHOTOELECTRIC GENERATOR Abstract Manufacture of a photoelectric converter by a photolithographic or stamping process prior to coating with a photoelectrically emissive material is described. This gives an economic and simple means of mass-producing photoelectric converter cells, and in one aspect is analogous to that used for pressing optical discs. Copyright © 2006 - 2012 Avto Metals plc. All rights reserved. Forward Looking Statement may be found at http://www.avtometals.gi/fwdlook.shtml. |
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